RADNEXT – JIACO Instruments to present on the use of MIP for radiation testing

JIACO Instruments will present at the Radnext Workshop in Rome (May 6–7). On May 6, Ya-Shan Peng will introduce a Microwave Induced Plasma (MIP) technique for artifact-free semiconductor decapsulation. This method uses neutral, halogen-free radicals to selectively remove encapsulant material without damaging the die or wires. As it avoids ion bombardment, device functionality remains unchanged, enabling reliable front-side access and preserving the integrity of subsequent radiation (SEE) testing.

JIACO Instruments will be presenting at Radnext Workshop, the workshop on radiation hardness testing of semiconductor devices and systems, in Rome – Italy on May 6 & 7th. 

On May 6th, our colleague Ya-shan Peng will give a presentation at the ENEA Frascati Research Center: “Artifact-Free Decapsulation Using Highly Selective Microwave Induced Plasma Etching”. This talk discusses the use of atmospheric pressure Microwave Induced Plasma (MIP) as an alternative approach for artifact-free decapsulation. By employing neutral halogen-free radical species, the MIP technique provides highly selective removal of encapsulant materials while keeping the die surface and metal wires intact. As the MIP etching mechanism does not involve ion bombardment, the electrical functionality of the devices remains unaffected after decapsulation. This approach enables reliable front-side access to the device without introducing structural degradation or functional variation, thereby maintaining the validity of subsequent SEE characterization

You can register for RADNEXT via this link: https://indico.cern.ch/event/1577141/registrations/122774/

We look forward to meeting you in Rome!

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