Work recently published in Microelectronics Reliability 137 (2022), 114766, describes extensive failure analysis process, developed to localize and analyze in details aluminium corrosion in IGBT modules. Investigation of this failure mechanism, common in harsh environments, has been essentially enabled by Microwave Induced Plasma (MIP) decapsulation technique. MIP selectively removed the passivation material in studied IGBT device, without sacrificing the inorganic materials beneath it, and thus provided top-view analysis of the corrosion products.
The work presented in this publication has been carried out by an international research consortium at ABB Drives in Finland, at Aalto University (at Micronova and Nano Microscopy Center) in Finland, at University of Bremen in Germany, and at IWO Ede NL in the Netherlands. The work has been partially funded by the Power2Power project, a co-funded European innovation project in the semiconductor industry.
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